Improving the Performance of the P-Cui/N-Inse Photodetector by Adding Back-Reflective and Interlayer Layers Using SCAPS-1D

Abstract

The p-cui/n-InSe photodetector was studied using the SCAPS-1D simulation program. We improved the detector by changing the thickness of some layers and introducing back-reflecting layers (BSL) onto the basic detector until we obtained the highest specific detection value, which was 8.29*10¹³cm.HZ^1/2W^-1. Then, we added interlayers with a thickness of 0.03 mW until we obtained the highest specific detection value, which was 9.30*10¹³cmHZ^1/2W^-1. Then, the best back-reflecting layer, which was InP, was combined with the best interlayer, which was PEDOT: PSS, and placed between the p-cui layer and the n-InSe absorption layer. Thus, we obtained an improved detector with a specific detection value of 2.57*10¹⁵cm.HZ^1/2 W^-1.